Personal Info

E-mail: john.murphy(at)materials.ox.ac.uk

Tel: 01865 273746 (department); 01865 274873 (College)

Web link: http://www.materials.ox.ac.uk/peoplepages/murphy.html

Academic Background:
MA in Physics (University of Oxford, 2000-03); DPhil in Materials Science (University of Oxford, 2003-06); PGDipLATHE (University of Oxford, 2011); Tutor at St Anne’s College (2004-present); Research Fellow (Department of Materials, University of Oxford, 2007-2008); Junior Research Fellow (Wolfson College, Oxford, 2008); Non-Stipendiary Lecturer at St Anne’s College (2008); Director of Studies in Materials Science at St Anne’s College (2008-2009) ; Junior Research Fellow, St Anne’s College, Oxford (2008-2011); Royal Academy of Engineering/ EPSRC Research Fellow (Department of Materials, University of Oxford, 2008-present); Stipendiary Lecturer at St Anne’s College (2011-present).

Teaching Interests:

Undergraduate:

• Mathematics for Materials Science
• Mechanical properties of materials
• Semiconductor devices
• Statistical mechanics

Research Interests:

• Crystalline silicon solar cells
• Measurement of carrier lifetime in silicon
• Mechanical, electrical and transport properties of light elements (particularly oxygen and nitrogen) in silicon
• BCC metals for fusion reactor applications

Selected Recent Publications:

V. Lang, J.D. Murphy, R.J. Falster, J.J.L. Morton, “Spin-dependent recombination in Czochralski silicon containing oxide precipitates”, Journal of Applied Physics, 111 013710 (2012)

J.D. Murphy, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster, “The effect of oxide precipitates on minority carrier lifetime in p-type silicon”, Journal of Applied Physics, 110 053713 (2011)

J.D. Murphy, R.J. Falster, “Contamination of silicon by iron at temperatures below 800°C”, Physica Status Solidi Rapid Research Letters, 5 370 (2011)

Z.Zeng, J.D. Murphy, R.J. Falster, X. Ma, D. Yang, P.R. Wilshaw, “The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon”, Journal of Applied Physics, 109 063532 (2011)

Y. Wang, J.D. Murphy, P.R. Wilshaw, “Determination of grain orientations in multi-crystalline silicon by reflectometry”, Journal of the Electrochemical Society, 157 H884 (2010)

J.D. Murphy, A. Giannattasio, Z. Yao, C.J.D. Hetherington, P.D. Nellist, S.G. Roberts, “The mechanical properties of tungsten grown by chemical vapour deposition”, Journal of Nuclear Materials, 386-388 583 (2009)

C.R. Alpass, J.D. Murphy, R.J. Falster, P.R. Wilshaw, “Nitrogen diffusion and interaction with dislocations in single-crystal silicon”, Journal of Applied Physics, 105 013519 (2009)