Personal Info

E-mail: peter.wilshaw(at)materials.ox.ac.uk

Tel: 01865 273736

Web Link: http://www.materials.ox.ac.uk/peoplepages/wilshaw.html

Academic Background:
Undergraduate: Natural Sciences, Cambridge; Graduate: Department of Materials, Oxford; I have been a Fellow of St Anne’s since 1996.

Teaching Interests:
Undergraduate:
The more physics-based parts of the course, for example; the electrical and optical properties of materials, semiconductors and quantum mechanics.
Graduate:
See my Departmental website: http://www.materials.ox.ac.uk/peoplepages/wilshaw.html.

Research Interests:
• Characterization of the electrical and mechanical properties of defects in semiconductors.
• The development of silicon substrates with improved properties.
• High resolution 2D mapping of dopant distributions in semiconductors.
• Development of a bioactive coating for metal implant prostheses.

Selected Publications:
P.R. Wilshaw, K. Mallik and R.J. Falster, ‘Substrate for High Frequency Integrated Circuits UK Patent 0618202.6 15th Sept 2006’ (2006)
K. Mallik, C.H. de Groot, P. Ashburn and P.R. Wilshaw, ‘Enhancement of resistivity of Czochralski silicon by deep level manganese doping’, Applied Physics Letters 89(11), 2006
M.B.H. Breese, L. Huang, E.J. Teo, P.J.C. King and P.R. Wilshaw, ‘Transmission ion channeling analysis of isolated 60 degrees misfit dislocations’, Applied Physics Letters 87(21), 2005
D.J. Stowe, K.J. Fraser, S.A. Galloway, S. Senkader, R.J. Falster and P.R. Wilshaw, ‘Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon’ in A.G. Cullis, J.L. Hutchison (eds.), Microscopy of Semiconducting Materials, 107, 355-58
J.D. Murphy, A. Giannattasio, C.R. Alpass, S. Senkader, R.J. Falster and P.R. Wilshaw, ‘The influence of nitrogen on dislocation locking in float-zone silicon’, Gettering and Defect Engineering in Semiconductor Technology Xi (2005), 108-9, 139-44
J.H. Evans-Freeman, D. Emiroglu, K.D. Vernon-Parry, J.D. Murphy and P.R. Wilshaw, ‘High resolution deep level transient spectroscopy applied to extended defects in silicon’, Journal of Physics-Condensed Matter 17(22) (2005), S2219-27
A. Giannattasio, J.D. Murphy, S. Senkader, R.J. Falster and P.R. Wilshaw, ‘Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments’, Journal Of The Electrochemical Society 152 (6) (2005) G460-67
A. Giannattasio, J.D. Murphy, S. Senkader, R.J. Falster and P.R. Wilshaw, ‘Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005)’, Journal Of The Electrochemical Society 152 (8) (2005) L12-L12
J.D. Murphy, A. Giannattasio, S. Senkader, R.J. Falster and P.R. Wilshaw, ‘Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments’, Physica Status Solidi A-Applications And Materials Science 202 (5) (2005) 926-30
S. Senkader, A. Giannattasio, R.J. Falster and P.R. Wilshaw, ‘Dislocation locking in silicon by oxygen and oxygen transport at low temperatures', Gettering And Defect Engineering In Semiconductor Technology (2004), 95-96; 43-52
Z. Barkay, E. Grunbaum, Y. Shapira, P. Wilshaw, K. Barnham, B. Bushnell, N.J. Ekins-Daukes and M. Mazzer, ‘High-resolution scanning electron microscopy of dopants in p-i- n junctions with quantum wells’. Electron Microscopy And Analysis 2003, 143-46
E.P.K. Briggs, M., A.R. Walpole, E. Palsgard and P.R. Wilshaw, ‘Formation of highly adherent nano-porous alumina on Ti-based substrates: a novel bone implant coating’, Journal Of Materials Science: Materials in Medicine 15 (2004), 1-9
A. Giannattasio, S. Senkader, R.J. Falster and P.R. Wilshaw, ‘The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon’, Computational Materials Science 30 (1-2) (2004), 131-36
K. Mallik, R.J. Falster and P.R. Wilshaw, ‘Schottky diode back contacts for high frequency capacitance studies on semiconductors’, Solid-State Electronics 48 (2) (2004), 231-38
A. Giannattasio, J.D. Murphy, S. Senkader, R.J. Falster and P.R. Wilshaw, ‘Impurity Locking of Dislocations in Silicon. Electrochemical Society Proceedings’, High Purity Silicon (2004), 39-54